Sintered, grain stabilized tantalum is doped with silicon which prevents grain growth even at high temperatures. This makes this tantalum suitable for use at even the highest operating temperatures. The fine-grained microstructure remains stable even after being annealed at temperatures of up to approximately 2000 °C. This process ensures that the material's excellent mechanical properties such as its ductility and strength remain intact.
Sound speed, longitudinal clong
4100 m/s at 20 °C
Sound speed, transversal ctrans
2900 m/s at 20 °C
Electron work function We
4.3 eV at 20 °C
Superconductive transition temperature Tsuper
Neutron capture cross-section σN
0 m² at 20 °C
Crystallization temperature Tx
900 - 1450 °C
Melting point Tm
Grain stabilized tantalum in the form of wire or sheets is ideal for sintering into tantalum anodes or for applications in the furnace construction sector.
Outstanding resistance against aqueous solutions and metal melts.
This material has excellent cold ductility, superconductivity and a high level of biocompatibility.
This material data has been provided by Plansee.