Grain Stabilized Tantalum (TaKS) Sintered Wire

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Description

Sintered, grain stabilized tantalum is doped with silicon which prevents grain growth even at high temperatures. This makes this tantalum suitable for use at even the highest operating temperatures. The fine-grained microstructure remains stable even after being annealed at temperatures of up to approximately 2000 °C. This process ensures that the material's excellent mechanical properties such as its ductility and strength remain intact.

This material data has been provided by Plansee.

All metrics apply to room temperature unless otherwise stated. SI units used unless otherwise stated.
Equivalent standards are similar to one or more standards provided by the supplier. Some equivalent standards may be stricter whereas others may be outside the bounds of the original standard.

Ashby charts

Properties

General

PropertyValueTemperature

Neutron capture cross-section

0 m²

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23.0 °C

Thermal

PropertyValue

Crystallization temperature

900 - 1450 °C

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Melting point

2966 °C

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Electrical

PropertyValueTemperature

Electron work function

4.3 eV

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23.0 °C

Superconductive transition temperature

-268.65 °C

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Acoustical

PropertyValueTemperature

Sound speed, longitudinal

4100 m/s

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23.0 °C

Sound speed, transversal

2900 m/s

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23.0 °C

Chemical properties

Property

Tantalum

99.9 %

min

Technological properties

Property
Application areas

Grain stabilized tantalum in the form of wire or sheets is ideal for sintering into tantalum anodes or for applications in the furnace construction sector.

Corrosion properties

Outstanding resistance against aqueous solutions and metal melts.

Other

This material has excellent cold ductility, superconductivity and a high level of biocompatibility.