Components for epitaxial processes
The epitaxial processes MOCVD (Metal Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) are of crucial importance, for example, during the manufacture of LED chips and transistors. These processes are used for the growth of the semiconductor layers.
Materials in an epitaxial reactor chamber must withstand temperatures of up to 2200°C. Plansee can manufacture temperature-resistant components made of molybdenum, tungsten, tantalum, and engineered alloys for your system.
Higher melting point: molybdenum (melting point 2620°C), tantalum (melting point 3017°C), and tungsten (melting point: 3420°C) are refractory metals whose high melting points make them ideally suited for use in high-temperature processes like MOCVD and MBE.
Corrosion resistance: molybdenum, tantalum and tungsten are corrosion-resistant in a variety of atmospheres even at very high temperatures.
Outstanding purity: Impurities in reactor components may also contaminate the semiconductor during operation. To guarantee the quality of the semiconductors and the efficiency of the LEDs or transistors, Plansee materials must be free of impurities. They guarantee a purity of over 99.97%.
Low vapor pressure: Plansee materials are ideally suited for use in high and ultra-high vacuums.
Special nondeformability requirements
Molybdenum and tungsten keep in good shape even at high temperatures and when exposed to frequent cooling and heating cycles. With special alloys such as TZM, WVM, ML and WL, Plansee have extended the lifetimes of their materials even further. They offer users outstanding creep resistance and material strength.