Components for epitaxial growth processes

Metal Organic Chemical Vapor Deposition (MOCVD) and Molecular Beam Epitaxy (MBE) are epitaxial processes that are essential, for example, during the manufacture of LED chips and transistors since they are used for the growth of the semiconductor layers.

Materials that are used in an epitaxial reactor chamber must resist temperatures of up to 2200°C. Plansee can manufacture temperature-resistant components made of molybdenum, tungsten, tantalum, and engineered alloys for your system.

Higher melting point: With their high melding points the refractory metals molybdenum (melting point 2620°C), tantalum (melting point 3017°C), and tungsten (melting point: 3420°C) are ideally suited for use in high-temperature processes like MOCVD and MBE.

Corrosion resistance: Furthermore, molybdenum, tantalum, and tungsten are corrosion-resistant in a variety of atmospheres even at very high temperatures.

Outstanding purity: Since impurities in reactor components might be potential sources of contamination of the semiconductor, chamber components must be highly pure. To guarantee the quality of the semiconductors and, eventually, the efficiency of the LEDs or transistors, Plansee materials are free of impurities. They ensure a purity of over 99.97%.

Low vapour pressure: Plansee materials are ideally suited for use in high and ultra-high vacuums.

Special form stability requirements

Tungsten and molybdenum retain their shape even at high temperatures and when exposed to frequent heating and cooling cycles. With special alloys such as ML, WL, TZM, and WVM,  Plansee has extended the lifetimes of their materials even further as they offer outstanding creep resistance and material strength.