Propiedades
General
| Property | Temperature | Value |
|---|---|---|
Densidad | 23.0 °C | 3.3 g/cm³ Show Supplier Material materials with Densidad of 3.3 g/cm³ |
Mecánica
| Property | Temperature | Value |
|---|---|---|
Coeficiente de Poisson | 23.0 °C | 0.24 [-] Show Supplier Material materials with Coeficiente de Poisson of 0.24 [-] |
Dureza Vickers | 23.0 °C | 969 [-] Show Supplier Material materials with Dureza Vickers of 969 [-] |
Módulo elástico | 23.0 °C | 320 GPa Show Supplier Material materials with Módulo elástico of 320 GPa |
Resistencia a la compresión | 23.0 °C | 2500 MPa Show Supplier Material materials with Resistencia a la compresión of 2500 MPa |
Resistencia a la flexión | 23.0 °C | 350 MPa Show Supplier Material materials with Resistencia a la flexión of 350 MPa |
Aplicaciones térmicas
| Property | Temperature | Value |
|---|---|---|
Calor específico | 23.0 °C | 740 J/(kg·K) Show Supplier Material materials with Calor específico of 740 J/(kg·K) |
Coeficiente de dilatación térmica | 23.0 °C | 4.8E-6 1/K Show Supplier Material materials with Coeficiente de dilatación térmica of 4.8E-6 1/K |
Conductividad térmica | 23.0 °C | 170 W/(m·K) Show Supplier Material materials with Conductividad térmica of 170 W/(m·K) |
Eléctrico
| Property | Temperature | Value |
|---|---|---|
Constante dieléctrica | 23.0 °C | 8.56 [-] Show Supplier Material materials with Constante dieléctrica of 8.56 [-] |
Resistividad eléctrica | 23.0 °C | 1.00E+16 Ω·m Show Supplier Material materials with Resistividad eléctrica of 1.00E+16 Ω·m |
Rigidez dieléctrica | 23.0 °C | 15 kV/mm Show Supplier Material materials with Rigidez dieléctrica of 15 kV/mm |
Tangente de pérdidas | 23.0 °C | 2.8E-4 [-] Show Supplier Material materials with Tangente de pérdidas of 2.8E-4 [-] |
Technological properties
| Property | ||
|---|---|---|
| Application areas | Aluminum Nitride Ceramics is ideal for applications where heat dissipation is required. In addition, since it offers a coefficient of thermal expansion (CTE) near that of silicon, and excellent plasma resistance, it is used for: Semiconductor processing equipment components, Ceramic Heat-sinks for high power system, Crucible for Metal Melting, Ceramic Rod, Ceramic Heater, Ceramic Substrate | |
| Processing methods | Ceramic Injection Molding, Low Pressure Injection Molding, Cold Isostatic Press, Dry Press, Tape Casting, Precision Machining Processing | |