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“Easy Transfer”: the easiest way to transfer monolayer graphene onto your substrate. The growth method was CVD synthesis.
theoretical thickness of graphene monolayer
3760 cm²/Vs at 20 °C
FET Electron Mobility on SiO₂/Si substrate
410 - 490 Ω/sq at 20 °C
Van der Pauw sheet resistance on SiO₂/Si substrate (1cm x 1cm)
Graphene research, flexible batteries, electronics, aerospace industry, MEMS and NEMS, microactuators, conductive coatings
"Easy Transfer": avoids metal etching, avoids hazardous chemical handling, bottom layer removed. Coverage of >98%.
Growth method: CVD. Processed in Clean Room Class 1000.
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