SIGRAFINE® SiC Coating

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Description

SIGRAFINE SiC Coating is a dense, wear-resistant silicon carbide coating. It has high corrosion and heat resistance properties as well as excellent thermal conductivity. We apply SiC in thin layers onto the graphite using the chemical vapor deposition (CVD) process.


The coating improves product quality and increases process efficiency, thus reducing overall operating costs for our customers. This coating extends the service life of graphite components and achieves the high-purity surface structures required in processing semiconductor materials.


We supply SiC-coated products made from high-strength isostatic graphite and carbon fiber-reinforced carbon. These include components for fluidized-bed reactors and STC-TCS converters, as well as reflectors for CZ units and wafer carriers for PECVD, Si epitaxy, and MOCVD units.

This material data has been provided by SGL Carbon.

All metrics apply to room temperature unless otherwise stated. SI units used unless otherwise stated.
Equivalent standards are similar to one or more standards provided by the supplier. Some equivalent standards may be stricter whereas others may be outside the bounds of the original standard.

Ashby charts

Properties

General

PropertyTemperatureValueComment

Bulk density

23.0 °C

3.2 g/cm³

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XRD

Surface roughness

2.5 μm

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Profilemeter

Mechanical

PropertyTemperatureValueComment

Elastic modulus

23.0 °C

435 GPa

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Nanoindentation

Thermal

PropertyTemperatureValueComment

Coefficient of thermal expansion

23.0 °C

4.3E-6 1/K

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@100-600°C; Dilatometer

Optical

PropertyValue

Optical plane orientation

111 preferred via XRD

Chemical properties

PropertyValueComment

Aluminium

4E-6 %

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max.

Antimony

1E-6 %

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max.

Arsenic

5E-7 %

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max.

Bismuth

1E-6 %

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max.

Calcium

5E-6 %

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max.

Chromium

5E-6 %

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max.

Copper

1E-6 %

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max.

Gallium

5E-6 %

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max.

Germanium

5E-6 %

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max.

Indium

1E-6 %

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max.

Iron

1E-6 %

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max.

Lead

1E-6 %

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max.

Magnesium

1E-6 %

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max.

Manganese

5E-7 %

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max.

Nickel

5E-7 %

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max.

Phosphorus

1E-6 %

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max.

Potassium

5E-6 %

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max.

Silicon

SiC (1:1 Si/C using XPS)

Sodium

5E-6 %

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max.

Sulfur

4E-6 %

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max.

Tellurium

1E-6 %

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max.

Tin

1E-6 %

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max.

Titanium

5E-7 %

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max.

Tungsten

1E-6 %

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max.

Vanadium

1E-7 %

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max.

Zinc

5E-6 %

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max.

Technological properties

Property
Application areas

Coating for components for fluidized-bed reactors and STC-TCS converters, as well as reflectors for CZ units and wafer carriers for PECVD, Si epitaxy, and MOCVD units.

Processing methods

CVD