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Tungsten is doped with between 1.0 and 2.0 percent of lanthanum oxide (La₂O₃) by weight in order to improve its creep resistance and increase the recrystallization temperature. WL is also easier to machine due to the finely distributed oxide particles in its structure. The electron work function of tungsten-lanthanum oxide is significantly lower than that of pure tungsten.
This material data has been provided by Plansee.
Base plates for semiconductors
Components for epitaxial growth processes
Cylinders for hot isostatic pressing (HIP)
Electrodes for resistance welding made of tungsten and molybdenum
Heating elements for MOCVD
Lead replacement for X-ray shielding
Molybdenum sputtering targets
Nozzles for the production of wool and fibers
Plansee’s newly patented coating material pushing boundaries in sputtering target efficiency
Tungsten Alloy Balancing Weights
Tungsten, molybdenum and tantalum for evaporation coils
Show Supplier Material materials with Lanthanum of 1.5 %
WL is a popular choice for ion sources, lamp electrodes and welding electrodes.
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